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SPD18P06P The Infineon Technologies SPD18P06P is a P-Channel MOSFET with a 60V drain-source voltage and 18.6A continuous drain current. It is supplied in a TO-252-3 package.
Mfr Part #:

SPD18P06P

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPD18P06P is a P-Channel MOSFET with a 60V drain-source voltage and 18.6A continuous drain current. It is supplied in a TO-252-3 package.
✓ Total Stock: 2,500 pcs
$ Price Range: $2.56

SPD18P06P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SPD18P06P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Thermal Resistance
Vgs (Max)
Vgs(th) (Max) @ Id
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SPD18P06P Description

Short technical summary and product information.

The Infineon Technologies SPD18P06P is a P-Channel enhancement mode MOSFET designed for power applications. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 18.6A at 25°C.

 

Key electrical characteristics include a maximum power dissipation of 80W (Tc) and a low drain-source on-state resistance (Rds(on)) of 0.13Ω at 13.2A and 10V gate-source voltage. The device operates over a wide temperature range from -55°C to 175°C (TJ).

 

This MOSFET is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for various electronic circuits requiring efficient power switching.

 

Additional features include avalanche rating and dv/dt rating, indicating robustness in demanding applications. The operating and storage temperature range is -55°C to 175°C.

SPD18P06P Quick Information

Product Type: MOSFET
Series: SIPMOS
Canonical Name: Infineon Technologies SPD18P06P P-Channel MOSFET
Subcategory: Single FETs, MOSFETs

SPD18P06P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPD18P06P Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPD18P06P Features

  • P-Channel enhancement mode MOSFET.
  • 60V drain-source breakdown voltage.
  • 18.6A continuous drain current.
  • Low Rds(on) of 0.13Ω.
  • TO-252-3 surface mount package.

SPD18P06P Applications

  • Power management in portable electronics.
  • Load switching applications requiring high efficiency.
  • DC-DC converter designs with P-Channel topology.
  • Battery protection circuits in handheld devices.
  • Motor drive control for low-power systems.

SPD18P06P FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SPD18P06P MOSFET?

The drain-source voltage (Vdss) of the SPD18P06P MOSFET is 60V.

What is the continuous drain current for the SPD18P06P at 25°C?

The continuous drain current (Id) for the SPD18P06P at 25°C is 18.6A.

What is the operating temperature range for the SPD18P06P?

The operating temperature range for the SPD18P06P is -55°C to 175°C (TJ).

What package type is the SPD18P06P MOSFET supplied in?

The SPD18P06P MOSFET is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

What is the Rds On for the SPD18P06P at 13.2A and 10V?

The Rds On for the SPD18P06P at 13.2A and 10V is a maximum of 0.13Ω.

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