SPD14N06S2-80 The Infineon Technologies SPD14N06S2-80 is an N-Channel MOSFET with a 55V drain-source breakdown voltage and a continuous drain current of 17A. It is designed for surface mount applications.
Mfr Part #:

SPD14N06S2-80

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPD14N06S2-80 is an N-Channel MOSFET with a 55V drain-source breakdown voltage and a continuous drain current of 17A. It is designed for surface mount applications.
✓ Total Stock: 3,281 pcs
$ Price Range: $2.56

SPD14N06S2-80 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,281 pcs
3281 pcs On Request 1 On Request On Request 05+ On Request On Request

SPD14N06S2-80 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SPD14N06S2-80 Description

Short technical summary and product information.

The SPD14N06S2-80 from Infineon Technologies is an N-Channel MOSFET designed for power switching applications. It features a drain-source breakdown voltage (Vds) of 55V and a continuous drain current (Id) of 17A at 25°C case temperature.

 

This MOSFET offers a low drain-source on-state resistance (Rds(on)) of 80mOhm maximum at 7A and 10V gate-source voltage, ensuring efficient power transfer. The gate threshold voltage (Vgs(th)) is rated at 4V maximum at 14µA. It operates within a wide temperature range from -55°C to 175°C.

 

The device is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly processes. Its features include avalanche rating and dv/dt rating, making it robust for demanding applications.

 

Key electrical characteristics include an input capacitance (Ciss) of 400pF maximum and a gate charge (Qg) of 10nC maximum. The device also incorporates a reverse diode with a continuous forward current of 17A and a forward voltage of up to 1.3V.

SPD14N06S2-80 Quick Information

Product Type: MOSFET
Canonical Name: Infineon Technologies SPD14N06S2-80 N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

SPD14N06S2-80 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPD14N06S2-80 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPD14N06S2-80 Features

  • N-Channel MOSFET with 55V breakdown voltage.
  • Continuous drain current of 17A.
  • Low on-state resistance of 80mOhm max.
  • Wide operating temperature range: -55°C to 175°C.
  • Surface mount TO-252-3 package.

SPD14N06S2-80 Applications

  • Suitable for high-efficiency switching circuits.
  • Used in automotive and industrial applications.
  • Ideal for DC-DC converter designs.
  • Power management in motor control systems.

SPD14N06S2-80 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 55V.

What is the gate threshold voltage?

The gate threshold voltage is 2.1V minimum, 3V typical, and 4V maximum.

What is the maximum continuous drain current?

The maximum continuous drain current is 17A.

What is the maximum drain-source on-state resistance?

The maximum drain-source on-state resistance is 80mOhm.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What package type is the SPD14N06S2-80?

The SPD14N06S2-80 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package for surface mounting.

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