| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,035 pcs
|
2035 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPD11N10 is an N-Channel enhancement mode MOSFET designed for high efficiency switching applications. It is manufactured by Infineon Technologies using their advanced trench technology.
Key electrical specifications include a drain-source voltage (Vdss) of 100V, continuous drain current of 10.5A at 25°C case temperature, and a maximum on-resistance of 170mOhm at VGS=10V. The device features a gate threshold voltage range of 2.1V to 4V and a maximum power dissipation of 50W.
The MOSFET is housed in a TO252-3 (DPAK) surface mount package, offering excellent thermal performance with a junction-to-case thermal resistance of 3 K/W. It is suitable for applications such as DC-DC converters, power management, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
10.5A at 25°C case temperature.
Maximum 170mOhm at VGS=10V, ID=7.8A.
-55°C to 175°C.
TO252-3 (DPAK).
Typical 3V, maximum 4V at ID=21µA.
50W at 25°C case temperature.