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949 pcs
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949 pcs | On Request | 1 | On Request | On Request | 98+P/ | On Request | On Request |
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The SPD09N05 from Infineon is a single N-channel MOSFET designed for power switching applications. It features a maximum Drain-Source Voltage of 55V and a low on-resistance (RDS(on) Max) of 2.2mΩ, ensuring efficient power delivery.
This MOSFET is housed in a TO-263 package, suitable for surface mounting. Its typical input capacitance is 11.25nF, with rise and fall times of 14ns and 11ns respectively. The device can handle a maximum power dissipation of 250W and operates within a temperature range of -55°C to 175°C.
Key electrical characteristics include a typical power dissipation of 1.8W. The SPD09N05 is a reliable component for various electronic designs requiring efficient switching and power management.
The maximum Drain-Source Voltage for the SPD09N05 is 55V.
The maximum on-resistance (RDS(on)) of the SPD09N05 is 2.2mΩ.
The SPD09N05 is available in a TO-263 package.
The SPD09N05 operates within a temperature range of -55°C to 175°C.
The RoHS status of the SPD09N05 is RoHS3 Compliant.