| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPD08P06PGBTMA1 is a P-Channel MOSFET designed for power applications. It features a drain-source breakdown voltage of -60V and a continuous drain current of 8.83A at 25°C ambient temperature.
Key electrical characteristics include a maximum on-state resistance of 300mOhm at 10A and 6.2V gate-source voltage, and a gate threshold voltage typically around -3V. The device offers a maximum power dissipation of 42W at 25°C case temperature.
This MOSFET operates within a wide temperature range of -55°C to 175°C. It is packaged in a TO-252-3 (DPak) surface-mount package, suitable for various electronic designs. The device is also avalanche rated and dv/dt rated, enhancing its robustness in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -60V.
The continuous drain current is 8.83A at 25°C ambient temperature.
The Rds(on) is a maximum of 300mOhm at 10A and 6.2V.
The operating temperature range is -55°C to 175°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.