| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The Infineon SPD08P06P is a P-channel MOSFET designed for various applications. It features a drain-source breakdown voltage of -60V and a maximum continuous drain current of 70A at 25°C ambient temperature. The device offers a maximum on-state resistance of 300mΩ at a gate-source voltage of -6.2V and a drain current of -10A.
This MOSFET is packaged in a PG-TO252-3 surface-mount package and is supplied on tape and reel for automated assembly. It boasts AEC-Q101 qualification, indicating suitability for automotive applications, and is 100% avalanche tested. The operating and storage temperature range is from -55°C to +175°C.
Key electrical characteristics include a gate threshold voltage typically around -3V, and various dynamic parameters such as input capacitance (Ciss) up to 420pF and output capacitance (Coss) up to 135pF. The integrated reverse diode provides a continuous forward current of -8.80A.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -60V.
The maximum continuous drain current is 70A at TA=25°C.
The maximum on-state resistance is 300mΩ at VGS=-6.2V and ID=-10A.
The gate threshold voltage is typically -3V, with a minimum of -2.1V and a maximum of -4V.
The operating and storage temperature range is -55°C to +175°C.
The SPD08P06P is supplied in a PG-TO252-3 package.
Yes, the SPD08P06P is AEC-Q101 qualified for automotive applications.