SPD08P06P The Infineon Technologies SPD08P06P is a P-channel MOSFET designed for various applications. It features a 60V drain-source voltage and a continuous drain current of 8.83A.
Mfr Part #:

SPD08P06P

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPD08P06P is a P-channel MOSFET designed for various applications. It features a 60V drain-source voltage and a continuous drain current of 8.83A.
✓ Total Stock: 2,500 pcs
$ Price Range: $2.56

SPD08P06P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

SPD08P06P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SPD08P06P Description

Short technical summary and product information.

The Infineon Technologies SPD08P06P is a P-channel MOSFET belonging to the Metal Oxide Semiconductor Field-Effect Transistor family. It is designed for applications requiring a 60V drain-to-source voltage and can handle a continuous drain current of up to 8.83A under specific conditions. The MOSFET exhibits a maximum on-resistance of 300mOhm at 6.2A and 10V gate-source voltage, with a gate threshold voltage of 4V at 250µA.

 

This component is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, making it suitable for surface mounting. It has an input capacitance of 420pF at 25V and a gate charge of 13nC at 10V. The maximum power dissipation is rated at 42W (Tc).

 

The SPD08P06P is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating its suitability for a wide range of manufacturing environments. Its P-channel configuration and electrical characteristics make it a versatile component for power management and switching applications.

SPD08P06P Quick Information

Product Type: MOSFET
Canonical Name: Infineon Technologies SPD08P06P P-Channel MOSFET
Subcategory: P-Channel

SPD08P06P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPD08P06P Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPD08P06P Features

  • P-channel MOSFET with 60V drain-source voltage.
  • Handles 8.83A continuous drain current.
  • Low on-resistance of 300mOhm.
  • TO-252-3 surface mount package.
  • RoHS3 compliant and MSL 1 rated.

SPD08P06P Applications

  • Ideal for power switching circuits.
  • Suitable for voltage regulation.
  • Used in DC-DC converters.
  • Applicable in battery management.
  • General purpose power applications.

SPD08P06P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SPD08P06P?

The maximum drain-to-source voltage is 60V.

What is the continuous drain current rating?

The continuous drain current is 8.83A at ambient temperature.

What is the maximum on-resistance (Rds on)?

The maximum Rds on is 300mΩ at Vgs=10V and Id=6.2A.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 4V at Id=250µA.

What is the maximum gate charge?

The maximum gate charge is 13nC at Vgs=10V.

What is the maximum power dissipation?

The maximum power dissipation is 42W at case temperature.

What package is the SPD08P06P available in?

It is available in TO-252-3 (DPak, SC-63) surface-mount package with supplier package code PG-TO252-3.

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