| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Power Dissipation | |
| Tape & Reel |
The Siemens SPD08N05L is a SIPMOS Power Transistor featuring N-channel enhancement mode operation. It is designed for applications requiring a drain-source voltage of up to 55V and can handle a continuous drain current of 8.4A at 25°C case temperature.
Key electrical characteristics include a low drain-source on-state resistance, with a typical value of 0.08 Ohm at VGS = 4.5V and ID = 5.9A. The gate threshold voltage is typically 1.61V. The device is avalanche rated and dv/dt rated, with a maximum operating temperature of 175°C.
Available in P-TO252 (Tape and Reel) and P-TO251 (Tube) packages, the SPD08N05L is suitable for various power switching applications. Its thermal resistance from junction to case is 6.25 K/W, facilitating efficient heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 55V.
The continuous drain current is 8.4A at 25°C case temperature and 5.9A at 100°C case temperature.
The typical on-state resistance is 0.08 Ohm at VGS = 4.5V and 5.9A, and 0.1 Ohm at VGS = 10V and 5.9A.
The operating and storage temperature range is -55°C to +175°C.
The SPD08N05L is available in P-TO252 (Tape and Reel) and P-TO251 (Tube) packages.