| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32,499 pcs
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32499 pcs | On Request | 1 | On Request | On Request | 1331+ | On Request | On Request |
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The Infineon Technologies SPD07N60C3BTMA1 is a high-performance N-Channel MOSFET belonging to the CoolMOS C3 technology family. It features a high breakdown voltage of 650V and a continuous drain current capability of 7.3A at a case temperature.
This MOSFET boasts a low on-state resistance of 600mOhm at 4.6A and 10V gate-source voltage, contributing to improved efficiency. Key electrical characteristics include a gate charge of 27 nC at 10V and an input capacitance of 790 pF at 25V.
Designed for surface mount applications, the SPD07N60C3BTMA1 comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package. It operates within a temperature range of -55°C to 150°C (TJ), making it suitable for various demanding power electronic designs.
Features like ultra-low gate charge and improved transconductance enhance its suitability for high-voltage applications requiring efficient power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage for the SPD07N60C3BTMA1 is 650V.
The continuous drain current is 7.3A.
The maximum on-state resistance is 600mOhm at 4.6A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.