| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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622 pcs
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622 pcs | On Request | 1 | On Request | On Request | 0808+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPD07N20 from Infineon Technologies is a high-performance N-Channel MOSFET designed for various power switching applications. It offers a robust drain-source voltage rating of 200V and can handle a continuous drain current of up to 7A at 25°C.
Key electrical characteristics include a maximum on-state resistance (Rds On) of 400mOhm at 4.5A and 10V gate-source voltage, and a gate threshold voltage of 4V at 1mA. The device operates within a wide temperature range of -55°C to 175°C.
This MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for compact designs. Its features like enhancement mode and avalanche rating contribute to its reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
7A at 25°C case temperature.
Maximum 0.4 Ohm at VGS=10V and ID=4.5A.
Maximum 31.5nC at VGS=10V.
40W at 25°C case temperature.
-55°C to 175°C junction temperature.
TO-252-3 (DPak) surface mount package, also known as PG-TO252-3.