| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,264 pcs
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2264 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,350 pcs
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1350 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Infineon SPD06N80C3 is a high-performance CoolMOSTM Power Transistor engineered with revolutionary high voltage technology. It is designed for industrial applications requiring high DC bulk voltage and switching applications such as active clamp forward converters.
Key electrical specifications include a maximum drain-source breakdown voltage of 800V and a continuous drain current of 6A at 25°C ambient temperature. The transistor exhibits a typical on-state resistance of 0.9 Ohms at 25°C and a total gate charge of 31 nC.
This MOSFET is housed in a PG-TO252-3 package, suitable for surface-mount designs. Its robust construction and high peak current capability make it a reliable choice for demanding power applications. The device is qualified according to JEDEC standards and features Pb-free lead plating, RoHS compliance, and halogen-free mold compound.
Applications include industrial power supplies, active clamp forward converters, and other high-voltage switching circuits where efficiency and reliability are paramount. The extreme dv/dt rating and ultra-low gate charge contribute to its performance in fast switching environments.
The maximum drain-source breakdown voltage is 800V.
The continuous drain current at 25°C is 6A.
The typical on-state resistance at 25°C is 0.9 Ohms.
The typical total gate charge is 31 nC.
The package type is PG-TO252-3.
The operating and storage temperature range is -55°C to 150°C.