| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPD04P10PLGBTMA1 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current of 4.2A at 25°C case temperature.
This MOSFET offers a maximum on-state resistance (Rds On) of 850mOhm at 3A and 10V gate-source voltage, and 1050mOhm at 2.75A and 4.5V. It operates within a wide temperature range of -55°C to 175°C.
The device is packaged in a TO-252-3 (DPak) surface-mount package, suitable for various electronic designs. It is also noted as being Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.37 | $1.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-100V
-4.2A at 25°C case temperature
850mOhm max at VGS=-10V, 1050mOhm max at VGS=-4.5V
-1V to -2V
TO-252-3 (DPak) surface mount
-55°C to 175°C
12nC typical