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SPD04N80C3ATMA1 The Infineon Technologies SPD04N80C3ATMA1 is an N-Channel Power MOSFET with a drain-source voltage of 800V and a continuous drain current of 4A. It is housed in a surface-mount TO-252-3 package.
Mfr Part #:

SPD04N80C3ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPD04N80C3ATMA1 is an N-Channel Power MOSFET with a drain-source voltage of 800V and a continuous drain current of 4A. It is housed in a surface-mount TO-252-3 package.
✓ Total Stock: 6,020 pcs
$ Price Range: $2.56

SPD04N80C3ATMA1 Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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6,020 pcs
On Request
6020 pcs On Request 1 On Request On Request On Request On Request On Request
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SPD04N80C3ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SPD04N80C3ATMA1 Description

Short technical summary and product information.

The SPD04N80C3ATMA1 from Infineon Technologies is a high-voltage N-Channel Power MOSFET designed for industrial applications. It features a revolutionary high voltage technology with an 800V drain-source breakdown voltage and a maximum continuous drain current of 4A at 25°C.

 

This MOSFET offers a low on-state resistance of 1.3 Ohm at 2.5A and 10V gate drive, along with a typical gate charge of 23 nC. Its dynamic characteristics include a fast switching time with a typical rise time of 15 ns and fall time of 12 ns.

 

The device is suitable for switching applications and industrial use requiring high DC bulk voltage. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 63W at 25°C.

 

Packaged in a TO-252-3 (DPak) surface-mount configuration, the SPD04N80C3ATMA1 is designed for ease of integration into PCB layouts. It meets RoHS3 compliance standards.

SPD04N80C3ATMA1 Quick Information

Product Type: MOSFET Transistor
Canonical Name: Infineon Technologies SPD04N80C3ATMA1 N-Channel Power MOSFET
Subcategory: N-Channel

SPD04N80C3ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPD04N80C3ATMA1 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPD04N80C3ATMA1 Features

  • 800V drain-source breakdown voltage.
  • 4A maximum continuous drain current.
  • 1.3 Ohm maximum Rds On.
  • Fast switching characteristics.
  • TO-252-3 surface mount package.

SPD04N80C3ATMA1 Applications

  • Designed for industrial applications.
  • Suitable for high DC bulk voltage.
  • Used in switching applications.
  • Ideal for active clamp forward circuits.

SPD04N80C3ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SPD04N80C3ATMA1?

The maximum drain-source voltage is 800 V.

What is the maximum continuous drain current of the SPD04N80C3ATMA1?

The maximum continuous drain current is 4 A at 25°C case temperature and 2.5 A at 100°C case temperature.

What is the Rds On (Max) for the SPD04N80C3ATMA1?

The maximum Rds On is 1.3 Ohm at 2.5A drain current and 10V gate voltage, at 25°C.

What is the operating temperature range for this MOSFET?

The operating and storage temperature range is -55°C to 150°C.

What package type is the SPD04N80C3ATMA1 supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the SPD04N80C3ATMA1 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1 Unlimited.

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