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SPD04N60C3 The Infineon Technologies SPD04N60C3 is an N-Channel MOSFET with a 600V drain-source voltage and a continuous drain current of 4.5A. It is housed in a TO-252 package.
Mfr Part #:

SPD04N60C3

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPD04N60C3 is an N-Channel MOSFET with a 600V drain-source voltage and a continuous drain current of 4.5A. It is housed in a TO-252 package.
✓ Total Stock: 21,500 pcs
$ Price Range: $2.56

SPD04N60C3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
16,500 pcs
On Request
16500 pcs On Request 1 On Request On Request 21+13+ On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SPD04N60C3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SPD04N60C3 Description

Short technical summary and product information.

The Infineon Technologies SPD04N60C3 is an N-Channel MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 4.5A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 950mOhm at 2.8A and 10V, a gate threshold voltage (Vgs(th)) of 3.9V at 200µA, and a gate charge (Qg) of 25nC at 10V. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is supplied in a TO-252-3, DPak package, suitable for surface mounting. Its technology is MOSFET (Metal Oxide), and it is part of the CoolMOS™ C3 series.

 

Features include ultra-low gate charge and high peak current capability, making it suitable for various power switching applications.

SPD04N60C3 Quick Information

Product Type: MOSFET
Series: C3
Canonical Name: Infineon Technologies SPD04N60C3 N-Channel MOSFET
Subcategory: N-Channel

SPD04N60C3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPD04N60C3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPD04N60C3 Features

  • 600V drain-source breakdown voltage.
  • 4.5A continuous drain current.
  • 950mOhm maximum on-resistance.
  • 25nC maximum gate charge.
  • TO-252 surface mount package.

SPD04N60C3 Applications

  • Used in power supply circuits.
  • Suitable for DC-DC converters.
  • Ideal for motor control applications.
  • Power management in industrial systems.
  • Switching applications up to 400V.

SPD04N60C3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SPD04N60C3?

600V.

What package is the SPD04N60C3 available in?

TO-252-3, DPak (2 Leads + Tab), SC-63.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the maximum on-resistance of the SPD04N60C3?

950mOhm at Id=2.8A, Vgs=10V.

What is the gate threshold voltage?

3.9V maximum at Id=200µA.

What is the typical gate charge?

25nC at Vgs=10V.

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