SPD03N60S5 The Infineon Technologies SPD03N60S5 is an N-Channel Power MOSFET designed for surface mount applications. It offers a 600V drain-to-source voltage and a continuous drain current of 3.2A.
Mfr Part #:

SPD03N60S5

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPD03N60S5 is an N-Channel Power MOSFET designed for surface mount applications. It offers a 600V drain-to-source voltage and a continuous drain current of 3.2A.
✓ Total Stock: 30,000 pcs
$ Price Range: $2.56

SPD03N60S5 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
30,000 pcs
30000 pcs On Request 1 On Request On Request 11+ On Request On Request

SPD03N60S5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SPD03N60S5 Description

Short technical summary and product information.

The Infineon Technologies SPD03N60S5 is an N-Channel Power MOSFET with a voltage rating of 600V (Vdss). This component is designed for surface mount applications and comes in a TO-252-3, DPak package.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 1.4 Ohms at 2A and 10V, a gate charge (Qg) of 16 nC at 10V, and an input capacitance (Ciss) of 420 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ).

 

With a maximum power dissipation of 38W (Tc) and a continuous drain current of 3.2A (Tc), the SPD03N60S5 is suitable for various power switching applications. The gate threshold voltage (Vgs(th)) is 5.5V at 135µA, and the maximum gate-to-source voltage is ±20V.

 

This MOSFET utilizes Metal Oxide technology and is RoHS3 compliant. Its surface mount capability makes it ideal for compact electronic designs.

SPD03N60S5 Quick Information

Product Type: MOSFET
Canonical Name: Infineon Technologies SPD03N60S5 N-Channel MOSFET
Subcategory: N-Channel

SPD03N60S5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPD03N60S5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPD03N60S5 Features

  • 600V drain-to-source voltage rating.
  • 3.2A continuous drain current.
  • 1.4 Ohm maximum on-resistance.
  • Surface mount TO-252-3 DPak package.
  • RoHS3 compliant for environmental standards.

SPD03N60S5 Applications

  • Suitable for power switching circuits.
  • Used in compact electronic designs.
  • Ideal for applications requiring high voltage.
  • Surface mount assembly compatibility.

SPD03N60S5 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SPD03N60S5?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating of the SPD03N60S5?

The maximum continuous drain current (Id) is 3.2A at case temperature.

What is the on-resistance of the SPD03N60S5?

The maximum on-resistance (Rds(on)) is 1.4Ohm at a drain current of 2A and gate-to-source voltage of 10V.

What package does the SPD03N60S5 use?

The SPD03N60S5 is offered in a PG-TO252-3-313 surface-mount package, also known as TO-252-3 or DPak.

What is the operating temperature range of the SPD03N60S5?

The operating junction temperature range is -55°C to 150°C.

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