| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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The Infineon Technologies SPD03N60C3 is a single N-Channel MOSFET belonging to the discrete semiconductor product category. It is designed for power switching applications, featuring a high drain-source voltage rating of 600V and a continuous drain current capability of 3.2A.
Key electrical characteristics include a maximum on-resistance of 1.4 Ohms at 2A and 10V gate-source voltage, and a gate threshold voltage of 3.5V typical at 250µA. The MOSFET has an input capacitance of 400pF and a gate charge of 17nC.
This device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, identified by the supplier device package code PG-TO252-3-313. It operates within a temperature range of -55°C to 150°C (TJ). The MOSFET technology is Metal Oxide.
It is suitable for various industrial applications requiring efficient power switching and voltage control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SPD03N60C3 is 600V.
The continuous drain current for the SPD03N60C3 is 3.2A.
The maximum on-resistance (Rds On) for the SPD03N60C3 is 1.4 Ohms at 2A and 10V.
The SPD03N60C3 is an N-Channel MOSFET.
The SPD03N60C3 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
The operating temperature range for the SPD03N60C3 is -55°C to 150°C (TJ).