| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Tape & Reel | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon SPD02N80C3ATMA1 is an N-Channel Power MOSFET from the CoolMOS™ C3 series. It is designed for high-voltage applications, offering a maximum drain-to-source voltage (Vds) of 800V and a continuous drain current (Id) of 2A at 25°C.
This MOSFET features a low on-resistance (Rds On) of 2.7 Ohms maximum at 1.2A and 10V gate drive voltage. The gate charge (Qg) is a maximum of 16 nC at 10V, and the input capacitance (Ciss) is 290 pF maximum at 100V.
The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 42W. The gate-source voltage (Vgs) maximum is ±20V, and the gate threshold voltage (Vgs(th)) is 3.9V maximum at 120µA.
Packaged in a TO-252-3 (DPak) surface-mount package, the SPD02N80C3ATMA1 is suitable for various power management designs requiring high voltage blocking capabilities and efficient switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 800V.
The package is TO-252-3, DPak (2 Leads + Tab), SC-63.
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current (Id) at 25°C is 2A.
The maximum on-resistance (Rds(on)) is 2.7 Ohms at 1.2A and 10V.
The maximum gate charge (Qg) is 16 nC at Vgs = 10V.
The maximum input capacitance (Ciss) is 290 pF at Vds = 100V.