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SPD02N80C3 The Infineon Technologies SPD02N80C3ATMA1 is an N-Channel MOSFET featuring 800V drain-to-source voltage and 2A continuous drain current. It is housed in a surface-mount TO-252 package.
Mfr Part #:

SPD02N80C3

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon Technologies SPD02N80C3ATMA1 is an N-Channel MOSFET featuring 800V drain-to-source voltage and 2A continuous drain current. It is housed in a surface-mount TO-252 package.
✓ Total Stock: 3,605 pcs

SPD02N80C3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
2,505 pcs
On Request
2505 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,100 pcs
On Request
1100 pcs On Request 1 On Request On Request 05+ On Request On Request
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SPD02N80C3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
FET Type
Failure Rate
Gate Charge
Input Capacitance
Lead Style
Mounting Type
Operating Temperature
Power Dissipation
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SPD02N80C3 Description

Short technical summary and product information.

The Infineon Technologies SPD02N80C3ATMA1 is an N-Channel MOSFET from the CoolMOS™ series. It is designed for high-voltage applications, offering a drain-to-source voltage (Vds) of 800V and a continuous drain current (Id) of 2A at 25°C.

 

Key electrical characteristics include a maximum gate threshold voltage (Vgs(th)) of 3.9V at 120µA, a maximum on-resistance (Rds(on)) of 2.7 Ohms at 1.2A and 10V gate drive, and input capacitance (Ciss) of 290pF at 100V. The maximum gate-to-source voltage (Vgs) is ±20V.

 

This MOSFET has a maximum power dissipation of 42W and operates within a temperature range of -55°C to 150°C. It is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

 

Compliance information indicates RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1.

SPD02N80C3 Quick Information

Product Type: MOSFET
Series: CoolMOS™
Canonical Name: Infineon Technologies SPD02N80C3ATMA1 N-Channel MOSFET
Subcategory: N-Channel

SPD02N80C3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPD02N80C3 Features

  • 800V drain-to-source voltage rating.
  • 2A continuous drain current capability.
  • Surface mount TO-252 package.
  • N-Channel MOSFET technology.
  • CoolMOS™ series for high performance.

SPD02N80C3 Applications

  • High-voltage power supply switching circuits.
  • LED lighting drivers and ballasts.
  • AC-DC converters and inverters.
  • Switching mode power supplies (SMPS).

SPD02N80C3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SPD02N80C3ATMA1?

The maximum drain-to-source voltage is 800V.

What is the continuous drain current at 25°C?

The continuous drain current at 25°C is 2A.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance is 2.7 Ohms at 1.2A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SPD02N80C3ATMA1 supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

How is the SPD02N80C3ATMA1 mounted?

It is a surface mount device.

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