| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,200 pcs
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3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPD02N60C3 is an N-Channel Power MOSFET belonging to the CoolMOS™ series. It is designed for applications requiring high voltage and efficient switching. Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 1.8A at 25°C.
This MOSFET offers a maximum on-resistance (Rds On) of 3 Ohms at 1.1A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is 3.9V maximum at 80µA, and the maximum gate-source voltage (Vgs) is ±20V. Input capacitance (Ciss) is rated at 200pF maximum at 25V, and gate charge (Qg) is 12.5nC maximum at 10V.
With a maximum power dissipation of 25W (Tc), the SPD02N60C3 operates across a wide temperature range from -55°C to 150°C (TJ). It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.
This component is RoHS3 compliant and has an MSL rating of 1 Unlimited. Its construction utilizes Metal Oxide Semiconductor technology, making it a reliable choice for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current (Id) is 1.8A at 25°C.
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-252-3 (DPak) surface mount package, supplier device package PG-TO252-3-11.
The maximum gate charge (Qg) at 10V is 12.5 nC.
The maximum on-resistance (Rds(on)) is 3 Ohms at 1.1A and 10V gate drive.
The maximum input capacitance (Ciss) at 25V is 200 pF.