| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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37,593 pcs
|
37593 pcs | On Request | 1 | On Request | On Request | 0734+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPD02N50C3 is a high-voltage N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 560V and a continuous drain current of 1.8A at 25°C case temperature.
Key electrical characteristics include a low on-state resistance of 3 Ohm maximum at 1.1A and 10V gate-source voltage, and a gate threshold voltage of 3.9V maximum at 80µA. The MOSFET boasts a low gate charge (Qg) of 9 nC typical at 10V gate-source voltage and a high dv/dt rating of 155V/ns.
This device is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. The operating temperature range is from -55°C to 150°C (TJ). Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, offering improved transconductance and ultra-low effective capacitances.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 560V.
The continuous drain current is 1.8A at case temperature.
The maximum on-resistance is 3Ohm at 1.1A drain current and 10V gate drive.
It is available in a TO-252-3 (DPak) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The typical gate threshold voltage is 2.5V, with a maximum of 3.9V at 80µA drain current.
The total gate charge is 15nC when driven from 0V to 10V.