| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,886 pcs
|
2886 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
27 pcs
|
27 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPB80P06PGATMA1 is a P-Channel MOSFET designed for power applications. It features a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 80A at 25°C case temperature.
This MOSFET offers a low on-state resistance (Rds On) of 0.023 Ohm at 64A and 10V gate-source voltage, minimizing conduction losses. It operates within a wide temperature range of -55°C to 175°C.
The device is packaged in a TO-263-3 (D²Pak) surface-mount package, suitable for various electronic designs. It is rated for 340W maximum power dissipation at 25°C case temperature and supports a gate-source voltage of up to ±20V.
Compliance includes RoHS3, Lead Free, and Halogen Free standards. The MSL is rated at 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.85 | $5.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 60 V.
The continuous drain current is 80A at 25°C case temperature and 64A at 100°C case temperature.
The maximum Rds On is 0.023 Ohm at 64A and 10V.
The operating temperature range is -55°C to 175°C.
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
Yes, it is RoHS3 Compliant.