| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,362 pcs
|
3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPB80P06P is a P-channel enhancement mode MOSFET from Infineon Technologies. It is designed for high efficiency power management applications. Key specifications include a maximum drain-source voltage of 60V and a gate threshold voltage of 4V at 5.5mA drain current. The device is housed in a TO263-3 (D2PAK) surface-mount package, suitable for automated assembly. This MOSFET is typically used in load switching, DC-DC converters, and power supply circuits where low side switching with a high-side P-channel device is beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The maximum gate threshold voltage is 4V at a drain current of 5.5mA.