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SPB80N10L G The Infineon Technologies SPB80N10L G is an N-Channel MOSFET with a 100V drain-source voltage and 80A continuous current rating. It is housed in a TO-263-3 surface mount package.
Mfr Part #:

SPB80N10L G

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPB80N10L G is an N-Channel MOSFET with a 100V drain-source voltage and 80A continuous current rating. It is housed in a TO-263-3 surface mount package.
✓ Total Stock: 897 pcs
$ Price Range: $2.56

SPB80N10L G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
897 pcs
On Request
897 pcs On Request 1 On Request On Request 07+ On Request On Request
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SPB80N10L G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SPB80N10L G Description

Short technical summary and product information.

This N-Channel MOSFET from Infineon Technologies, part number SPB80N10L G, is designed for power switching applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 80A at 25°C case temperature.

 

The device offers a low on-state resistance (Rds(on)) as low as 14mOhm at 58A and 10V gate-source voltage, and 24mOhm at 58A and 4.5V gate-source voltage, making it suitable for efficient power handling. The gate threshold voltage (Vgs(th)) is typically 1.6V at 2mA.

 

With an operating temperature range of -55°C to 175°C and a maximum power dissipation of 250W at 25°C, this MOSFET is built for demanding environments. It is packaged in a TO-263-3 (D²Pak) surface mount package, facilitating integration into various electronic designs.

 

Key electrical characteristics include an input capacitance (Ciss) of up to 4540pF and a gate charge (Qg) of up to 240nC. The thermal resistance from junction to case is a low 0.6 K/W.

SPB80N10L G Quick Information

Product Type: MOSFET
Canonical Name: Infineon Technologies SPB80N10L G N-Channel MOSFET
Subcategory: Single

SPB80N10L G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPB80N10L G Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPB80N10L G Features

  • N-Channel MOSFET technology.
  • 100V drain-source voltage rating.
  • 80A continuous drain current.
  • Low Rds(on) down to 14mOhm.
  • Wide -55°C to 175°C operating temperature.

SPB80N10L G Applications

  • Power supply circuits.
  • Motor control applications.
  • Switching power supplies.
  • DC-DC converters.

SPB80N10L G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What is the continuous drain current rating?

80A at 25°C case temperature, 58A at 100°C.

What is the on-resistance?

14mOhm maximum at VGS=10V, ID=58A.

What is the gate threshold voltage?

Typically 1.6V, with a range of 1.2V to 2V at VDS=VGS, ID=2mA.

What is the package type?

TO-263-3 (D²Pak) surface mount package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the device logic-level gate drive compatible?

Yes, the on-resistance is specified at 4.5V gate drive with 24mOhm maximum.

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