| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPB80N06S2L-07 is an N-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vds) of 55V and a continuous drain current (ID) of 80A at 25°C case temperature.
Key electrical characteristics include a low drain-source on-state resistance (Rds(on)) of 7 mOhm at 60A and 10V Vgs, and 7.1 mOhm at 60A and 4.5V Vgs, indicating efficient power handling. The gate threshold voltage (Vgs(th)) ranges from 1.2V to 2V at 150µA.
This MOSFET operates within a wide temperature range of -55°C to 175°C. It is housed in a TO-263-3, D²Pak package, suitable for surface mounting. The device is rated for 210W maximum power dissipation at 25°C case temperature and features avalanche rating and dv/dt rating for robust performance.
Additional specifications include input capacitance (Ciss) up to 4210 pF, output capacitance (Coss) up to 990 pF, and reverse transfer capacitance (Crss) up to 310 pF. Gate charge characteristics show a total gate charge (Qg) of up to 130 nC at 10V Vgs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
TO-263-3 (D²Pak) surface mount package.
-55°C to 175°C (junction).
80A.
5.6 mOhm.
1.2V to 2V.
95 nC.