| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPB80N06S2-H5 is an N-Channel MOSFET from the OptiMOS series, designed for power applications. It features a maximum drain-source voltage (Vds) of 55V and a continuous drain current (Id) of 80A at 25°C.
Key electrical characteristics include a low on-state resistance (Rds(on)) of 5.5 mOhm at 80A and 10V gate drive voltage, and a gate threshold voltage (Vgs(th)) of 4V maximum at 230µA. The device offers a maximum power dissipation of 300W at 25°C.
This MOSFET operates within a temperature range of -55°C to 175°C. It is packaged in a TO-263-3, D²Pak surface mount package, making it suitable for various electronic designs requiring efficient power switching.
Additional specifications include an input capacitance (Ciss) of 5500 pF and a gate charge (Qg) of 155 nC. The device is rated for a maximum gate-source voltage (Vgs) of ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 55 V.
The continuous drain current (ID) is 80 A at TC=25°C.
Typical on-resistance is 4.6 mOhm, maximum is 5.5 mOhm at VGS=10V and ID=80A.
The operating junction temperature range is -55°C to 175°C.
It comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface-mount package with supplier device package PG-TO263-3-2.
The maximum gate threshold voltage is 4 V at VGS=VDS and ID=230µA.
The maximum input capacitance is 5500 pF at VDS=25V and f=1MHz.