| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPB80N04S2L-03 is an N-channel power MOSFET manufactured by Infineon Technologies. It is rated for a 40V drain-to-source voltage and 80A continuous drain current at a case temperature of 25°C. The device is offered in a TO263-3 surface-mount package.
On-resistance is specified at 3.4mΩ maximum with VGS=10V and ID=80A, and 4.5mΩ maximum with VGS=4.5V. The gate threshold voltage ranges from 1.2V to 2V. Input capacitance is 7930pF at VDS=25V, and gate charge is 24nC, supporting efficient switching in power conversion circuits.
Thermal characteristics include a maximum power dissipation of 300W at TC=25°C and a junction-to-case thermal resistance of 0.5K/W maximum. The operating and storage junction temperature range is -55°C to 175°C. Pulsed drain current is rated at 320A, and single-pulse avalanche energy is 810mJ.
With its low on-resistance and high current capability, the SPB80N04S2L-03 is suitable for high-current power switching applications such as DC-DC converters, motor control, and load switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40V.
The continuous drain current is 80A at a case temperature of 25°C.
The maximum drain-source on-resistance is 3.4mΩ at VGS=10V and ID=80A. At VGS=4.5V, it is 4.5mΩ.
The gate threshold voltage is 1.2V minimum, 1.6V typical, and 2V maximum, measured at ID=250µA.
Maximum power dissipation is 300W at TC=25°C.
Operating and storage junction temperature range is -55°C to 175°C.