| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPB80N04S2-H4 is an OptiMOS Power-Transistor belonging to the N-Channel MOSFET family. It is designed for high-performance switching applications, offering a drain-source breakdown voltage of 40V and a continuous drain current of 80A at 25°C.
Key electrical characteristics include a low on-state resistance (RDS(on)) of 4mOhm at 80A and 10V gate-source voltage, and a gate threshold voltage (VGS(th)) of 4V maximum at 250µA. The device operates efficiently across a wide temperature range from -55°C to 175°C.
This MOSFET is housed in a TO-263-3, D²Pak surface mount package, making it suitable for space-constrained designs. Its features include avalanche rating and dv/dt rating, contributing to its robustness in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum continuous drain current is 80A at 25°C.
The Rds(on) is a maximum of 4mOhm at 80A and 10V.
The operating temperature range is -55°C to 175°C.
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.