Mfr Part #:

SPB80N04S2-04

The Infineon Technologies SPB80N04S2-04 is an N-Channel MOSFET with a 40V drain-source voltage and 80A continuous drain current. It is designed for surface mount applications in a TO-263-3 package.

✓ Total Stock: 510 pcs

$ Price Range: $2.56

SPB80N04S2-04 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	510 pcs On Request	510 pcs	On Request	1	On Request	On Request	0208+	On Request	On Request

SPB80N04S2-04 Description

Short technical summary and product information.

The SPB80N04S2-04 from Infineon Technologies is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 80A at 25°C case temperature. The device exhibits a low on-state resistance (Rds(on)) of 3.4mOhm at 80A and 10V gate-source voltage, contributing to efficient power delivery.

This MOSFET is constructed using advanced technology for enhanced performance and reliability, including an operating temperature range of -55°C to 175°C. It is rated for a maximum power dissipation of 300W at 25°C case temperature and has a gate-source voltage range of ±20V.

The SPB80N04S2-04 is housed in a TO-263-3, D²Pak package, making it suitable for surface mount assembly. Its thermal resistance from junction to case is a maximum of 0.5 K/W, facilitating effective heat management in demanding applications. The component also offers a high input capacitance (Ciss) of 6980 pF and a gate charge (Qg) of 170 nC, which are important parameters for driving the MOSFET.

SPB80N04S2-04 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: SPB80N04S2-04

Subcategory: Single N-Channel

SPB80N04S2-04 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SPB80N04S2-04 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPB80N04S2-04 Features

40V drain-source voltage rating.
80A continuous drain current capability.
Low 3.4mOhm on-resistance.
Wide -55°C to 175°C operating temperature.
Surface mount TO-263-3 package.

SPB80N04S2-04 Applications

Suitable for power switching circuits.
Used in high-current applications.
Ideal for surface mount designs.
Efficient power management solutions.

SPB80N04S2-04 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

40 V

What package type does this MOSFET use?

TO-263-3 (D²Pak)

What is the operating temperature range?

-55°C to 175°C junction temperature

What is the continuous drain current rating?

80 Amperes at a case temperature of 25°C

What is the maximum gate-source voltage?

±20 Volts

How much gate charge does the device require?

170 nanocoulombs at 10V gate drive

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	80 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	6980 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	PG-TO263-3-2
Supplier Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4 V