SPB21N50C3ATMA1 The Infineon Technologies SPB21N50C3ATMA1 is an N-Channel MOSFET designed for high voltage applications. It features a 560V drain-source voltage and a continuous drain current of 21A.
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SPB21N50C3ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPB21N50C3ATMA1 is an N-Channel MOSFET designed for high voltage applications. It features a 560V drain-source voltage and a continuous drain current of 21A.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

SPB21N50C3ATMA1 Available from 1 distributor

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✓ Non-Authorised
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SPB21N50C3ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SPB21N50C3ATMA1 Description

Short technical summary and product information.

The Infineon Technologies SPB21N50C3ATMA1 is a high-performance N-Channel MOSFET belonging to the Cool MOS™ Power Transistor family. It is engineered with revolutionary high voltage technology, offering a maximum drain-source voltage (VDS) of 560V and a continuous drain current (ID) of 21A at 25°C. This device boasts a low on-state resistance (RDS(on)) of 190mOhm at 13.1A and 10V gate drive, contributing to efficient power handling.

 

Key electrical characteristics include a gate threshold voltage (VGS(th)) of 3V typical and a total gate charge (Qg) of 95nC typical. The MOSFET is designed for periodic avalanche and extreme dv/dt ratings, making it suitable for demanding applications. Its ultra-low gate charge and effective capacitances enhance switching performance.

 

The SPB21N50C3ATMA1 is housed in a TO-263-3, D²Pak package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 208W at 25°C case temperature. The device is RoHS3 compliant and has an MSL 1 rating.

SPB21N50C3ATMA1 Quick Information

Product Type: MOSFET
Canonical Name: SPB21N50C3ATMA1
Subcategory: Power MOSFET

SPB21N50C3ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPB21N50C3ATMA1 Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPB21N50C3ATMA1 Features

  • High voltage N-Channel MOSFET technology.
  • 560V drain-source breakdown voltage.
  • 21A continuous drain current capability.
  • Low 190mOhm on-state resistance.
  • Surface mount TO-263 package.

SPB21N50C3ATMA1 Applications

  • Suitable for high voltage power supplies.
  • Used in power factor correction circuits.
  • Ideal for switch mode power supplies.
  • Applicable in industrial power systems.

SPB21N50C3ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SPB21N50C3ATMA1?

The maximum drain-source voltage is 560 V.

What is the continuous drain current of the SPB21N50C3ATMA1 at 25°C?

The continuous drain current is 21 A at 25°C.

What is the typical on-state resistance (RDS(on)) for this MOSFET?

The typical on-state resistance is 190 mOhm at 13.1A and 10V.

What is the operating temperature range for the SPB21N50C3ATMA1?

The operating and storage temperature range is -55°C to 150°C.

What package type is the SPB21N50C3ATMA1 supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

What is the RoHS status of the SPB21N50C3ATMA1?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1.

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