| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,512 pcs
|
4512 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPB21N10 is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications. The device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current rating of 21A. The gate threshold voltage is typically 3V, with a range of 2.1V to 4V at a drain current of 44µA. The zero gate voltage drain current is specified in the datasheet. The MOSFET is housed in a TO263-3 (D2PAK) surface-mount package, suitable for automated assembly. This part is commonly used in DC-DC converters, motor control, and power management circuits where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100V.
The gate threshold voltage is 2.1V to 4V, with a typical value of 3V at ID = 44µA.