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5,700 pcs
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5700 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The Infineon SPB20N60S5 is a high-performance N-Channel Power MOSFET designed for demanding high-voltage applications. Featuring Infineon's revolutionary Cool MOS technology, this transistor offers an impressive drain-source breakdown voltage of 600V and a continuous drain current capability of 20A at 25°C.
Key electrical characteristics include a low on-state resistance (RDS(on)) of 0.19 Ohms at 25°C and 13A, ultra-low gate charge, and extreme dv/dt rating, making it suitable for efficient power switching. The device operates over a wide temperature range from -55°C to +150°C.
Packaged in a PG-TO263 surface-mount package, the SPB20N60S5 is designed for easy integration into PCB layouts. Its thermal resistance junction-to-case is rated at 0.6 K/W, facilitating effective heat dissipation in power applications. This MOSFET is ideal for use in power supplies, inverters, and other high-voltage switching circuits where reliability and performance are critical.
The minimum drain-source breakdown voltage (V(BR)DSS) is 600 V at VGS=0V and ID=0.25mA.
The operating and storage temperature range is -55°C to +150°C.
The SPB20N60S5 is offered in a surface-mount PG-TO263 package.
The typical gate threshold voltage (VGS(th)) is 4.5 V at ID=1000µA and VGS=VDS.
The maximum continuous drain current is 20 A at a case temperature of 25°C, and 13 A at 100°C.
The typical drain-source on-resistance (RDS(on)) is 0.19 Ω at VGS=10V and ID=13A at 25°C.
The maximum power dissipation is 208 W at a case temperature of 25°C.