SPB20N60C3ATMA1 The Infineon Technologies SPB20N60C3ATMA1 is a 650V N-Channel MOSFET designed for power applications. It features a continuous drain current of 20.7A and a low on-resistance of 190mOhm.
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SPB20N60C3ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPB20N60C3ATMA1 is a 650V N-Channel MOSFET designed for power applications. It features a continuous drain current of 20.7A and a low on-resistance of 190mOhm.
✓ Total Stock: 20,020 pcs
$ Price Range: $2.56

SPB20N60C3ATMA1 Available from 1 distributor

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SPB20N60C3ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SPB20N60C3ATMA1 Description

Short technical summary and product information.

The Infineon Technologies SPB20N60C3ATMA1 is an N-Channel MOSFET belonging to the CoolMOS family, designed for high-voltage applications. It offers a maximum drain-source voltage (Vds) of 650V and a continuous drain current of 20.7A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 190mOhm at 13.1A and 10V gate-source voltage, and a gate charge (Qg) of 114 nC at 10V. The input capacitance (Ciss) is 2400 pF at 25V, and the gate threshold voltage (Vgs(th)) is 3.9V at 1mA.

 

This MOSFET is housed in a TO-263-3, D²Pak package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 208W at 25°C case temperature. The device utilizes advanced high-voltage technology with ultra-low gate charge and improved transconductance.

SPB20N60C3ATMA1 Quick Information

Product Type: MOSFET
Series: CoolMOS C3
Canonical Name: Infineon Technologies SPB20N60C3ATMA1 N-Channel Power MOSFET

SPB20N60C3ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPB20N60C3ATMA1 Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPB20N60C3ATMA1 Features

  • 650V drain-to-source voltage rating.
  • 20.7A continuous drain current.
  • 190mOhm maximum on-resistance.
  • Low gate charge for efficient switching.
  • Surface mount TO-263-3 package.

SPB20N60C3ATMA1 Applications

  • Suitable for high-voltage power supplies.
  • Ideal for switch-mode power supplies.
  • Used in power factor correction circuits.
  • Applicable in LED drivers.
  • Designed for general purpose power switching.

SPB20N60C3ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SPB20N60C3ATMA1?

The maximum drain-to-source voltage is 650V.

What is the continuous drain current of the SPB20N60C3ATMA1?

The continuous drain current is 20.7A at 25°C case temperature.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance is 190mOhm at 13.1A drain current and 10V gate-source voltage.

What is the gate charge of the SPB20N60C3ATMA1?

The typical gate charge is 114 nC at 10V gate-source voltage.

What is the package type for the SPB20N60C3ATMA1?

The package type is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

Is the SPB20N60C3ATMA1 RoHS compliant?

Yes, it is RoHS3 compliant.

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