| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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82 pcs
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82 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies SPB17N80C3ATMA1 is a CoolMOS Power Transistor designed for industrial applications requiring high DC bulk voltage and switching capabilities. This N-Channel MOSFET offers a high drain-source breakdown voltage of 800V and a continuous drain current of 17A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 290mOhm at 11A and 10V gate drive, a total gate charge of 117nC, and an input capacitance of 2300pF. The device is built with revolutionary high voltage technology, offering extreme dv/dt rated performance and high peak current capability.
Packaged in a TO-263-3, D²Pak surface mount package, the SPB17N80C3ATMA1 is suitable for various industrial switching applications, such as active clamp forward converters. It operates within a temperature range of -55°C to 150°C and features Pb-free lead plating, complying with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 800V.
The maximum continuous drain current is 17A at 25°C case temperature.
The Rds On is a maximum of 0.29 Ohms at 11A and 10V.
The operating temperature range is -55°C to 150°C.
This MOSFET is in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
Yes, this component is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.