Mfr Part #:

SPB10N10 G

Name: SPB10N10 G
Brand: Infineon Technologies
SKU: SPB10N10 G

MOSFET N-CH 100V 10.3A TO263-3

Stock on Request

SPB10N10 G Description

Short technical summary and product information.

MOSFET N-CH 100V 10.3A TO263-3

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

SPB10N10

Infineon Technologies

MOSFET N-CH 100V 10.3A TO263-3

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	10.3A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	426 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	50W (Tc)
Rds On (Max) @ Id, Vgs	170mOhm @ 7.8A, 10V
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 21µA