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SPB07N60S5

The Infineon Technologies SPB07N60S5 is an N-Channel Power MOSFET designed with Cool MOS technology. It offers a 600V breakdown voltage and a low on-state resistance.

✓ Total Stock: 5,000 pcs

$ Price Range: $2.56

SPB07N60S5 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SPB07N60S5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Input Capacitance	970 pF
Mounting Type	Surface Mount
Operating Temperature	-55 °C / 150 °C
Power Dissipation	83 W

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SPB07N60S5 Description

Short technical summary and product information.

The Infineon Technologies SPB07N60S5 is an N-Channel Power MOSFET featuring the revolutionary Cool MOS technology. This device is rated for a drain-source breakdown voltage of 600V and offers a low on-state resistance of 0.6 Ohms at a gate-source voltage of 10V and a drain current of 4.6A at 25°C.

Key electrical characteristics include a continuous drain current of 7.3A at 25°C and 4.6A at 100°C, a pulsed drain current of 14.6A, and a gate threshold voltage between 3.5V and 5.5V. The MOSFET boasts ultra-low gate charge and effective capacitances, contributing to its high performance.

Designed for high voltage applications, the SPB07N60S5 is periodic avalanche rated and extreme dv/dt rated. It comes in a PG-TO263 package suitable for surface mounting. The operating and storage temperature range is from -55°C to +150°C.

This component is ideal for power switching applications where high efficiency and reliability are critical. Its advanced technology enables reduced switching losses and improved overall system performance.

SPB07N60S5 Quick Information

Product Type: MOSFET

Canonical Name: Infineon Technologies SPB07N60S5 N-CHANNEL POWER MOSFET

Subcategory: N-Channel

SPB07N60S5 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SPB07N60S5 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPB07N60S5 Features

600V Drain-Source Breakdown Voltage.
0.6 Ohm On-State Resistance.
7.3A Continuous Drain Current.
Low Gate Charge.
PG-TO263 Surface Mount Package.

SPB07N60S5 Applications

High voltage power switching.
Efficient power conversion circuits.
Switch mode power supplies.
Motor control applications.

SPB07N60S5 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the SPB07N60S5?

The minimum drain-source breakdown voltage is 600V at VGS=0V and ID=0.25mA.

What package is the SPB07N60S5 available in?

The SPB07N60S5 is offered in the PG-TO263 surface-mount package.

What is the operating temperature range of the SPB07N60S5?

The operating and storage temperature range is -55°C to +150°C.

What is the continuous drain current rating of the SPB07N60S5?

The continuous drain current is 7.3A at TC=25°C and 4.6A at TC=100°C.

What is the typical on-resistance of the SPB07N60S5?

The typical drain-source on-state resistance is 0.54Ω at VGS=10V and ID=4.6A at 25°C, rising to 1.46Ω at 150°C.

What is the total gate charge of the SPB07N60S5?

The total gate charge is 27nC typical and 35nC maximum at VDD=350V and ID=7.3A.

What is the maximum power dissipation of the SPB07N60S5?

The maximum power dissipation is 83W at TC=25°C.