SPB07N60C3 The Infineon Technologies SPB07N60C3 is a 600V N-Channel MOSFET designed for high voltage applications. It features a surface mount TO-263 package and a continuous drain current of 7.3A.
Mfr Part #:

SPB07N60C3

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SPB07N60C3 is a 600V N-Channel MOSFET designed for high voltage applications. It features a surface mount TO-263 package and a continuous drain current of 7.3A.
✓ Total Stock: 4,598 pcs
$ Price Range: $2.56

SPB07N60C3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
598 pcs
598 pcs On Request 1 On Request On Request 0727+ On Request On Request

SPB07N60C3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SPB07N60C3 Description

Short technical summary and product information.

The Infineon Technologies SPB07N60C3 is a high-performance N-Channel Power MOSFET from the CoolMOS family. It offers a breakdown voltage of 600V and a continuous drain current of 7.3A at 25°C, with a reduced current of 4.6A at 100°C.

 

This MOSFET is designed with advanced CoolMOS technology, providing features such as ultra-low gate charge and improved transconductance. It has a low on-state resistance of 600mOhm at 4.6A and 10V, contributing to efficient power handling. The device is rated for a maximum power dissipation of 83W at 25°C.

 

Packaged in a TO-263-3, D²Pak surface mount package, the SPB07N60C3 is suitable for various power electronic applications. It operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a gate threshold voltage of 3V typical and input capacitance of 790pF typical.

 

Key electrical parameters include a drain-source breakdown voltage of 600V and a maximum gate-source voltage of ±20V. The device exhibits fast switching characteristics with turn-on and turn-off delay times typically around 6ns and fall times around 7ns.

SPB07N60C3 Quick Information

Product Type: MOSFET
Series: CoolMOS C3
Canonical Name: Infineon Technologies SPB07N60C3 N-Channel MOSFET
Subcategory: Power MOSFET

SPB07N60C3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPB07N60C3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPB07N60C3 Features

  • 600V drain-source breakdown voltage.
  • 7.3A continuous drain current.
  • 600mOhm maximum on-state resistance.
  • N-Channel CoolMOS technology.
  • TO-263 surface mount package.

SPB07N60C3 Applications

  • Used in industrial motor drive inverter circuits.
  • Suitable for high-efficiency DC-DC converter topologies.
  • Ideal for switch-mode power supply output stages.
  • Applied in automotive battery management systems.
  • Utilized in renewable energy solar inverter designs.

SPB07N60C3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source breakdown voltage?

600V

What package type does the SPB07N60C3 use?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

What is the operating temperature range?

-55°C to 150°C

What is the maximum on-state resistance?

0.6 Ohms at 10V gate drive and 4.6A drain current

What is the continuous drain current rating?

7.3 Amperes at 25°C case temperature

Is this an N-channel or P-channel MOSFET?

N-Channel

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