| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPB04N60C3 is an N-Channel Power MOSFET belonging to the CoolMOS™ series. It is designed for high voltage applications, offering a drain-to-source breakdown voltage of 600V and a continuous drain current of 4.5A at 25°C.
Key electrical characteristics include a maximum on-resistance of 950mOhm at 2.8A and 10V, a gate threshold voltage of 3.9V at 200µA, and an input capacitance of 490pF at 25V. The device also features a maximum gate-to-source voltage of ±20V and a maximum power dissipation of 50W at 25°C.
This MOSFET is housed in a TO-263-3, D²Pak package, suitable for surface mounting. The operating temperature range is from -55°C to 150°C (TJ). Its features include ultra-low gate charge and improved transconductance, making it suitable for various power switching applications.
The datasheet highlights features such as new revolutionary high voltage technology, ultra-low gate charge, and extreme dv/dt rated capabilities. It also specifies repetitive avalanche energy and current ratings, along with thermal resistance values for junction-to-case and junction-to-ambient.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 4.5A at a case temperature of 25°C.
The maximum on-resistance is 950mOhm at a gate-source voltage of 10V and drain current of 2.8A.
The SPB04N60C3 is available in a PG-TO263-3-2 package, which is a surface-mount TO-263-3 (D²Pak) package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 3.9V at a drain current of 200µA.
The typical input capacitance (Ciss) is 490pF at Vds = 25V and Vgs = 0V.