| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPB03N60C3 is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-voltage switching applications with a drain-to-source voltage rating of 600V. The device offers a maximum on-resistance of 1.4 Ohms at a gate voltage of 10V and a drain current of 2A. With a gate threshold voltage of 3.9V at 135µA, it is suitable for logic-level gate drive. The MOSFET has a maximum gate charge of 17nC at 10V, enabling fast switching. Its input capacitance is 40pF at 25V. These characteristics make it suitable for power conversion circuits such as AC-DC converters, power supplies, and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The maximum Rds(on) is 1.4 Ohms at 2A drain current and 10V gate voltage.
The maximum gate threshold voltage (Vgs(th)) is 3.9V at 135µA drain current.
The maximum gate charge (Qg) is 17nC at 10V gate voltage.
The maximum input capacitance (Ciss) is 40pF at 25V drain-source voltage.