| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPA20N60C3 is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for power switching applications, featuring a high drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20.7A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 190mOhm at 13.1A and 10V, an input capacitance (Ciss) of 2400 pF at 25V, and a gate charge (Qg) of 114 nC at 10V. The gate-to-source voltage (Vgs) is rated up to ±20V, with a gate threshold voltage (Vgs(th)) of 3.9V at 1mA.
This MOSFET has a maximum power dissipation of 34.5W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220-3 Full Pack package and utilizes a through-hole mounting type.
The SPA20N60C3 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected, making it suitable for various industrial and electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
20.7A at case temperature (Tc).
190 milliohms maximum at 13.1A drain current and 10V gate drive.
3.9V maximum at 1mA drain current.
114 nC at 10V gate-source voltage.
TO-220-3 Full Pack (PG-TO220-3-111).
-55°C to 150°C (junction).