| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPA16N50C3 from Infineon Technologies is a high-performance N-channel power MOSFET designed with their revolutionary CoolMOS technology. This device features a maximum drain-source voltage of 500V and a continuous drain current of 16A at 25°C case temperature.
Key electrical characteristics include a low on-state resistance (Rds On) of 280mOhm at 10A and 10V gate drive, and a gate threshold voltage of 3V typical. The MOSFET also boasts a low gate charge (Qg) of 66nC at 10V, contributing to efficient switching performance. Its input capacitance (Ciss) is 1600pF typical.
With a maximum power dissipation of 34W at 25°C case temperature and a wide operating temperature range of -55°C to 150°C, the SPA16N50C3 is suitable for various power applications. It is available in a Through Hole mounting package, specifically the TO-220-3 Full Pack (PG-TO220-3-111) supplier package.
This MOSFET is rated for extreme dv/dt and periodic avalanche, making it robust for demanding applications. The datasheet specifies avalanche energy ratings and a drain source voltage slope of 50 V/ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 500V at VGS=0V, ID=0.25mA.
The SPA16N50C3 is available in a TO-220-3 Full Pack package (PG-TO220-3-111) with through-hole mounting.
The operating temperature range is -55°C to 150°C (junction temperature).
The typical gate threshold voltage is 3V, with a maximum of 3.9V at ID=675µA.
The typical on-resistance is 0.28Ω at VGS=10V and ID=10A.
The typical input capacitance (Ciss) is 1600pF at VDS=25V, f=1MHz.
The maximum power dissipation is 34W at case temperature 25°C.