| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
262 pcs
|
262 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPA11N65C3XKSA1 is a high-voltage N-Channel Power MOSFET designed for demanding applications. It features a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 11A at 25°C case temperature.
This MOSFET boasts a low on-state resistance (Rds(on)) of 380mOhm at 7A and 10V gate-source voltage, contributing to efficient power handling. The gate threshold voltage (Vgs(th)) is typically 3V, with a maximum of 3.9V. Key electrical characteristics include an input capacitance (Ciss) of 1200pF and a gate charge (Qg) of 60nC at 10V.
Designed with advanced Cool MOS technology, it offers features like ultra-low gate charge and extreme dv/dt rating. The device operates within a temperature range of -55°C to 150°C. It is packaged in a TO-220-3 Full Pack configuration and supports through-hole mounting.
With a power dissipation of 33W (Tc) and a junction-to-case thermal resistance of 1 K/W, effective thermal management is crucial. The SPA11N65C3XKSA1 is suitable for various power switching applications where high voltage and current capabilities are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 650 V.
The continuous drain current is 11 A at 25°C case temperature and 7 A at 100°C case temperature.
The maximum on-state resistance is 380 mOhm at a gate-source voltage of 10V and a drain current of 7A.
This MOSFET is supplied in a TO-220-3 Full Pack package.
The operating and storage temperature range is -55°C to 150°C.
The gate charge (Qg) is a maximum of 60 nC at a gate-source voltage of 10V.