| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon SPA11N65C3 is a high-voltage N-channel power MOSFET utilizing Infineon's CoolMOS™ technology. This transistor is designed for high-performance applications requiring efficient power conversion.
Key electrical characteristics include a drain-source breakdown voltage of 650V and a typical on-state resistance of 0.38 Ohms at 7A drain current and 25°C junction temperature. It features a continuous drain current of 11A at 25°C case temperature and a pulsed drain current capability of 33A. The device also boasts a low gate charge and an extreme dv/dt rating, contributing to its robust performance.
Packaged in a PG-TO220FP package, the SPA11N65C3 is suitable for through-hole mounting. Its operating temperature range is from -55°C to 150°C. The thermal resistance from junction to case is a low 1 K/W, facilitating effective heat dissipation.
This MOSFET is well-suited for various power applications where high voltage and efficient switching are critical. Its features make it a reliable component for demanding power designs.
The minimum drain-source breakdown voltage is 650V at VGS=0V and ID=0.25mA.
The SPA11N65C3 is available in a PG-TO220FP through-hole package.
The operating and storage temperature range is -55°C to 150°C.
The typical drain-source on-state resistance is 0.34Ω at VGS=10V and ID=7A at 25°C.
The typical gate threshold voltage is 3V at ID=500µA and VGS=VDS.
The maximum power dissipation is 125W at TC=25°C (leaded version) or 33W (FullPAK version).