| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,250 pcs
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3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon SPA11N60CFD is a high-performance N-channel power MOSFET from the CoolMOS family. It is designed with revolutionary high voltage technology, offering an intrinsic fast-recovery body diode and extremely low reverse recovery charge.
Key electrical specifications include a drain-source breakdown voltage of 600V and a continuous drain current of 11A at 25°C. The on-state resistance (Rds(on)) is a maximum of 0.44 Ohms at 25°C with a gate-source voltage of 10V. Dynamic characteristics include an input capacitance of 1200pF and a total gate charge of up to 64nC.
This MOSFET is qualified for industrial grade applications according to JEDEC standards. It is housed in a PG-TO220-3-31 package suitable for through-hole mounting. The operating temperature range is -55°C to 150°C.
Features like extreme dv/dt rating, high peak current capability, and periodic avalanche rating make it suitable for demanding power applications.
The drain-source breakdown voltage is 600V.
The maximum Rds(on) is 0.44 Ohms.
The continuous drain current is 11A.
The operating and storage temperature range is -55°C to 150°C.
The package is PG-TO220-3-31.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.