| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPA11N60C3 is a power field-effect transistor belonging to the N-Channel MOSFET family. It is designed for robust performance with a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 11A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 380mOhm at 7A and 10V, an input capacitance (Ciss) of 1200pF at 25V, and a gate charge (Qg) of 60nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 3.9V at 500µA, and the maximum gate-to-source voltage is ±20V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220-3 Full Pack package and utilizes a through-hole mounting type, making it suitable for various power switching and amplification circuits. The device has a maximum power dissipation of 33W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V maximum.
11A at case temperature.
380mOhm maximum at 7A, 10V.
-55°C to 150°C junction temperature.
TO-220-3 Full Pack, through-hole mounting.
3.9V maximum at 500µA.
1200pF maximum at 25V.