| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,520 pcs
|
8520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPA06N80C3XKSA1 is a high-voltage N-Channel Power MOSFET designed for industrial applications with high DC bulk voltage and switching applications like active clamp forward.
Key electrical specifications include a drain-source breakdown voltage of 800V and a maximum continuous drain current of 6A at 25°C. The Rds On is specified at a maximum of 900mOhm at 3.8A and 10V gate-source voltage. It features a gate threshold voltage of 3V typical and a total gate charge of 31nC typical.
This MOSFET utilizes CoolMOS technology, offering extreme dv/dt rating and high peak current capability. It is qualified according to JEDEC standards for target applications.
The component is housed in a PG-TO220-3-31 package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800 V minimum at VGS=0 V, ID=250 µA.
TO-220-3 Full Pack (PG-TO220-3-31) with through-hole mounting.
-55°C to 150°C.
2.1 V minimum, 3 V typical, 3.9 V maximum at VDS=VGS, ID=0.25 mA.
0.9 ohm at VGS=10 V, ID=3.8 A, Tj=25°C.
31 nC typical, 41 nC maximum at Vgs=10 V.