| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Infineon SPA04N60C3 is a high-performance N-Channel MOSFET. It offers a robust 600V Drain Source Voltage (Vds) and a typical 650V Vds, making it suitable for various power switching applications.
With a continuous drain current (Id) of 4.5A and a pulse current (Idm) of 13.5A, this MOSFET can handle significant current loads. The on-resistance (Rds(on)) is specified at 950 mOhm at a Vgs of 10V, indicating efficient power transfer. The gate threshold voltage (Vgs Typ) is 3V, and the maximum gate source voltage is 20V.
This component operates within a wide temperature range of -55°C to +150°C and has a power dissipation (Pd) of 31W. It is housed in a TO-220F package, designed for through-hole mounting.
The SPA04N60C3 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected, meeting standard environmental and safety requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical drain-source voltage is 650V, with a maximum rating of 600V.
The continuous drain current is 4.5A.
The typical on-resistance is 950 mOhm at Vgs = 10V.
The operating temperature range is -55°C to +150°C.
The SPA04N60C3 is housed in a TO-220F through-hole package.
The typical gate threshold voltage is 3V.
The power dissipation is 31W.