SP8M3TB The ROHM Semiconductor SP8M3TB is an N/P-channel MOSFET designed for power switching applications. It features a 30V drain-source voltage and a 5A/4.5A continuous current rating.
Mfr Part #:

SP8M3TB

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor SP8M3TB is an N/P-channel MOSFET designed for power switching applications. It features a 30V drain-source voltage and a 5A/4.5A continuous current rating.
✓ Total Stock: 4,915 pcs
$ Price Range: $1.64

SP8M3TB Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,915 pcs
4915 pcs On Request 1 On Request On Request 1128+ On Request On Request

SP8M3TB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SP8M3TB Description

Short technical summary and product information.

The ROHM Semiconductor SP8M3TB is a versatile N/P-channel MOSFET suitable for power switching and DC/DC converter applications. It offers a drain-source voltage of 30V and a continuous drain current of 5A for the N-channel and 4.5A for the P-channel.

 

Key electrical characteristics include a low on-resistance, with the N-channel Rds(on) as low as 51mOhm at 5A and 10V Vgs. The gate threshold voltage is typically 1.0V, and the gate charge is 3.9nC maximum at 5V Vgs. The device also includes a built-in G-S protection diode.

 

Packaged in an 8-SOIC surface mount package, the SP8M3TB is designed for ease of integration into compact electronic designs. Its operating temperature range is up to 150°C (TJ), and it has a total power dissipation of 2W.

 

This MOSFET is ideal for applications requiring efficient power control and switching, such as power supplies and motor drivers.

SP8M3TB Quick Information

Product Type: MOSFET
Canonical Name: SP8M3TB N/P-Channel MOSFET
Subcategory: N/P-Channel

SP8M3TB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SP8M3TB Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SP8M3TB Features

  • N and P-Channel MOSFET configuration.
  • 30V Drain-Source Voltage rating.
  • Low Rds On: 51mOhm at 5A, 10V.
  • Surface mount 8-SOIC package.
  • Built-in G-S protection diode.

SP8M3TB Applications

  • Used in DC-DC converter circuits.
  • Ideal for load switching applications.
  • Suitable for battery management systems.
  • Used in power management for portable devices.

SP8M3TB FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SP8M3TB?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current rating for the SP8M3TB?

The N-Channel has a typical continuous drain current of 5A, and the P-Channel has a maximum continuous drain current of 4.5A.

What is the on-resistance of the SP8M3TB?

The maximum on-resistance is 51mOhm at 5A drain current and 10V gate-to-source voltage.

What package is the SP8M3TB available in?

The SP8M3TB is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating junction temperature range for the SP8M3TB?

The maximum operating junction temperature is 150°C.

Does the SP8M3TB have a logic-level gate?

Yes, the SP8M3TB features a logic-level gate, with a typical gate threshold voltage of 1.0V.

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