| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,649 pcs
|
1649 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Thermal Resistance | |
| Vgs(th) (Max) @ Id |
The SP8M3FU6TB is a dual N/P-channel MOSFET array manufactured by ROHM Semiconductor. It integrates both an N-channel and a P-channel MOSFET in a single SOP-8 package, enabling compact and efficient power management designs. The device is rated for a maximum drain-source voltage of 30V and can handle continuous drain currents of 5A (N-channel) and 4.5A (P-channel).
Key electrical characteristics include a maximum on-resistance of 51mOhm at VGS=10V and ID=5A, a gate threshold voltage of 2.5V at ID=1mA, and an input capacitance of 230pF at VDS=10V. The total gate charge is 5.5nC at VGS=5V, contributing to efficient switching performance. Switching times are specified with typical turn-on delay of 6ns and turn-off delay of 22ns.
The device is housed in a surface-mount SOP-8 package and is supplied on a reel for automated assembly. The maximum operating junction temperature is 150°C, with a storage temperature range of -55°C to +150°C. Thermal resistance from channel to ambient is 62.5°C/W when mounted on a ceramic board.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
5A for the N-channel and 4.5A for the P-channel.
51mOhm at VGS=10V and ID=5A.
SOP-8 (surface-mount).
Maximum 150°C.