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419 pcs
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419 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The ROHM Semiconductor SP8M3 is a 4V drive N-channel and P-channel complementary MOS Field-Effect Transistor (MOSFET). It is designed for surface mount applications and comes in an SOP package.
Key electrical specifications include a maximum drain-source voltage of 30V and a drain-source resistance of 82mΩ. The device can handle a maximum power dissipation of 2W. It operates within a temperature range of -55°C to 150°C.
This MOSFET is suitable for various electronic circuits requiring complementary FET functionality. Its surface mount capability allows for integration into compact designs.
The drain-source voltage of the SP8M3 is 30V.
The drain-source resistance of the SP8M3 is 82mΩ.
The maximum operating temperature for the SP8M3 is 150°C.
The SP8M3 uses an SOP package.
The RoHS status of the SP8M3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SP8M3 is 1 Unlimited.