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SP8K3FU6TB The ROHM Semiconductor SP8K3FU6TB is a dual N-channel MOSFET array with a 30V drain-source voltage and 7A continuous drain current. It is housed in an 8-SOIC package.
Mfr Part #:

SP8K3FU6TB

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor SP8K3FU6TB is a dual N-channel MOSFET array with a 30V drain-source voltage and 7A continuous drain current. It is housed in an 8-SOIC package.
✓ Total Stock: 1,230 pcs
$ Price Range: $1.64

SP8K3FU6TB Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,230 pcs
On Request
1230 pcs On Request 1 On Request On Request 1425+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SP8K3FU6TB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Thermal Resistance
Vgs(th) (Max) @ Id
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SP8K3FU6TB Description

Short technical summary and product information.

The ROHM Semiconductor SP8K3FU6TB is a dual N-channel MOSFET array designed for power switching applications and DC/DC converters. It features a low on-resistance of 24mOhm at 7A and 10V, a drain-source voltage of 30V, and a continuous drain current of 7A.

 

This MOSFET array is built with a Silicon N-channel MOS FET structure and includes a built-in G-S protection diode. It comes in a compact 8-SOIC surface mount package, measuring 6.0mm x 5.0mm, with a standard pitch of 1.27mm. The device operates at a channel temperature up to 150°C and has a total power dissipation of 2W.

 

Key electrical characteristics include a gate threshold voltage ranging from 1V to 2.5V, input capacitance of 600pF, and a gate charge of 11.8nC. The SP8K3FU6TB is suitable for applications requiring efficient power switching and voltage conversion.

SP8K3FU6TB Quick Information

Product Type: MOSFET Array
Series: SP8K3
Canonical Name: SP8K3FU6TB Dual N-Channel MOSFET
Subcategory: Array

SP8K3FU6TB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SP8K3FU6TB Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SP8K3FU6TB Features

  • Dual N-channel MOSFET array.
  • 30V drain-source voltage rating.
  • 7A continuous drain current.
  • Low on-resistance of 24mOhm.
  • Compact 8-SOIC surface mount package.

SP8K3FU6TB Applications

  • Used in DC-DC converter circuits.
  • Suitable for load switching applications.
  • Ideal for battery management systems.
  • Applicable in power management modules.

SP8K3FU6TB FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SP8K3FU6TB?

The drain-source voltage (Vdss) for the SP8K3FU6TB is 30V.

What is the continuous drain current of the SP8K3FU6TB?

The continuous drain current (Id) for the SP8K3FU6TB is 7A.

What is the on-resistance (Rds On) of the SP8K3FU6TB?

The Rds On is a maximum of 24mOhm when tested at 7A drain current and 10V gate-source voltage.

What package type is the SP8K3FU6TB supplied in?

The SP8K3FU6TB is supplied in an 8-SOIC package.

What is the operating temperature range for the SP8K3FU6TB?

The operating channel temperature for the SP8K3FU6TB is up to 150°C.

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